By Topic

Yield enhancement through defect reduction for post wet silicon nitride etch applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Dries, B.M. ; Fairchild Semicond., South Portland, ME, USA

Silicon etching in hot phosphoric acid is not new to the semiconductor manufacturing field. It has been used for decades to remove silicon nitride after LOCOS processes while preserving the integrity of the previously grown oxide. The etch has a high selectivity resulting in a good fit for this purpose. This paper will present an innovative cleaning technique for post hot phosphoric acid nitride strip applications that provide yield improvement through particle and defect reduction. The application developed at Fairchild Semiconductor, uses ammonium hydroxide, ozone, and water introduced in controlled amounts to promote the dissolution and removal of organic silicon nitride etch residues. This removal prevents downstream defect formation, improving product yields and long-term device reliability.

Published in:

Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop

Date of Conference:

4-6 May 2004