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New device structure for 18-V, high-performance SOI complementary bipolar LSIs using array transistors and flexible U-grooves

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8 Author(s)
Y. Tamaki ; Device Dev. Center, Hitachi Ltd, Tokyo, Japan ; K. Tsuji ; O. Ohtani ; H. Nonami
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We have developed a new device structure for high-performance and high-power mixed signal LSIs using 0.35 μm SOI complementary bipolar transistors. The new structure is composed of array transistors for various operating currents and a flexible U-groove layout for high-power transistors. Thermal simulation and test structure measurements showed the advantage of the new structure quantitatively.

Published in:

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Date of Conference:

22-25 March 2004