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Impact of pocket implant on MOSFET mismatch for advanced CMOS technology

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7 Author(s)
Mc Ginley, J. ; Motorola Inc, Crolles, France ; Noblanc, O. ; Julien, C. ; Parihar, S.
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This paper deals with MOS transistors mismatch for advanced 120 nm and 90 nm CMOS technologies. In particular we demonstrate pocket implant impact on the gate contribution that becomes more and more important with the gate oxide thickness reduction. Such a phenomenon can appear as a limit for matching improvement with CMOS technologies evolution.

Published in:

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Date of Conference:

22-25 March 2004