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High-speed characteristics of tunnelling injection and excited-state emitting InAs/GaAs quantum dot lasers

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2 Author(s)
Qasaimeh, O. ; Dept. of Electr. Eng., Jordan Univ. of Sci. & Technol., Irbid, Jordan ; Khanfar, H.

A detailed theoretical analysis of the high-speed characteristics of InAs/GaAs quantum dot lasers is presented. The modulation bandwidth, relative intensity noise (RIN) and induced carrier concentration chirp of a tunnelling injection laser and excited-state emitting DBR laser have been studied and compared with a conventional laser and cross-gain modulated laser. The study shows that the excited-state emitting DBR laser demonstrates higher modulation bandwidth and lower induced carrier concentration chirp than the tunnelling injection laser.

Published in:

Optoelectronics, IEE Proceedings -  (Volume:151 ,  Issue: 3 )

Date of Publication:

28 June 2004

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