Skip to Main Content
The investigation of an AlGaAs/GaAs HBT in which a heavily carbon doped base is grown by chemical beam epitaxy using trimethyl-Ga is reported. A planar technique which reduces surface recombination has been employed for selectively contacting the base region. A base width of 1000 AA and a high doping level of 7*1019 cm-3 is used. The sheet resistance of the base is less than 100 Omega / Square Operator . This transistor has a maximum current gain of 25 at a current density of 1.3*103 A/cm2.