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A novel technique is proposed to characterise the charge trapping properties of MOS capacitors by using the gate voltage ramping test. The parameter I=1-Ig(t)/Is(t+ Delta t) measured during gate voltage ramping reveals the dielectric charge trapping characteristics. Positive charge trapping before dielectric breakdown was observed using this technique. A comparison between I and flatband voltage shift, Delta Vfb, indicates that I gives the same information as Delta Vfb does at high stress fluences.