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Novel gate voltage ramping technique for the characterisation of metal-oxide-semiconductor capacitor charge trapping properties

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3 Author(s)
Ting, W. ; Texas Univ., Austin, TX, USA ; Lo, G.Q. ; Kwong, D.L.

A novel technique is proposed to characterise the charge trapping properties of MOS capacitors by using the gate voltage ramping test. The parameter I=1-Ig(t)/Is(t+ Delta t) measured during gate voltage ramping reveals the dielectric charge trapping characteristics. Positive charge trapping before dielectric breakdown was observed using this technique. A comparison between I and flatband voltage shift, Delta Vfb, indicates that I gives the same information as Delta Vfb does at high stress fluences.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 16 )