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Process dependence of interface state generation due to irradiation and hot carrier stress in rapid thermally nitrided thin gate oxides

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3 Author(s)
Joshi, A.B. ; Texas Univ., Austin, TX, USA ; Lo, G.Q. ; Kwong, D.K.

A study of the effects of nitridation time and temperature on the interface state generation in MOS devices with thin rapid thermally nitrided gate oxides is reported. A different process dependence was observed for interface state generation caused by X-ray irradiation and hot carrier stress. The discrepancy is explained using the structural changes at the interface during nitridation and some of the earlier defect generation models.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 16 )

Date of Publication:

2 Aug. 1990

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