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Browse Journals & Magazines > Electronics Letters ...> Volume:25 Issue:3 Help

Record low-threshold, single-strained-quantum-well, graded-index, separate-confinement heterostructure laser

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5 Author(s)
Vawter, G.A. ; Sandia Nat. Labs., Albuqueque, NM, USA ; Myers, D.R. ; Brennan, T.M. ; Hammons, B.E.
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Record low-threshold current density operation of a single-strained-quantum-well graded-index separate-confinement heterostructure GaInAs-AlGaAs laser has been obtained. The device was grown by molecular-beam epitaxy on a GaAs substrate and uses a proton implant stripe geometry to achieve a threshold current density of 1.3 kA/cm2.

Published in:
Electronics Letters  (Volume:25 ,  Issue: 3 )

Date of Publication: 2 Feb. 1989

Page(s):
243 - 244
ISSN :
0013-5194
INSPEC Accession Number:
3353429
Digital Object Identifier :
10.1049/el:19890172
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
2 Feb. 1989
Sponsored by :
Institution of Engineering and Technology

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