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Record low-threshold, single-strained-quantum-well, graded-index, separate-confinement heterostructure laser

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5 Author(s)
G. A. Vawter ; Sandia Nat. Labs., Albuqueque, NM, USA ; D. R. Myers ; T. M. Brennan ; B. E. Hammons
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Record low-threshold current density operation of a single-strained-quantum-well graded-index separate-confinement heterostructure GaInAs-AlGaAs laser has been obtained. The device was grown by molecular-beam epitaxy on a GaAs substrate and uses a proton implant stripe geometry to achieve a threshold current density of 1.3 kA/cm2.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 3 )