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Mode locking of a novel split-contact semiconductor Laser-experiment and theory

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2 Author(s)
Williamson, C.A. ; Dept. of Electron. Syst. Eng., Univ. of Essex, Colchester, UK ; Adams, M.J.

A novel semiconductor laser, with a curved and tapered active region and a split contact, has been experimentally and theoretically mode-locked for the first time. An innovative yet simple traveling-wave rate-equation model has been developed to incorporate the tapered waveguide structure together with external-cavity grating effects and the reverse biased saturable absorber region. Both the experiment and model have demonstrated pulsewidths of around 5.5 ps at a repetition frequency of 2.5 GHz and a tunable emission wavelength around 1550 nm. The model has been used to demonstrate optimized operation of the device with a predicted reduction in pulsewidths down to 1 ps.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:40 ,  Issue: 7 )