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A 4×64 pixel CMOS image sensor for 3-D measurement applications

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6 Author(s)
Elkhalili, O. ; Fraunhofer Inst. of Microelectron. Circuits & Syst., Duisburg, Germany ; Schrey, O.M. ; Mengel, P. ; Petermann, M.
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A 4×64 pixel 3-D CMOS imager based on time-of-flight (TOF) has been developed and successfully tested. The measurement range is up to 8 m with resolution of 1 cm. The scene depth is determined by measurement of the travel time of reflected laser pulses by employing a fast on-chip synchronous shutter (maximum shutter speed 30 ns). The multiple double short time integration (MDSI) algorithm enables suppression of the background illumination and correction for reflectance variations in the scene objects. The pixel size is 130×300 μm2. The sensor chip has been realized in a 0.5-μm n-well standard CMOS process.

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Solid-State Circuits, IEEE Journal of  (Volume:39 ,  Issue: 7 )