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Microscopic voids in the die attachment solder layers of power semiconductor devices degrade their overall thermal transfer performance. This paper presents analytical results of the effect of spherical and spheroidal void geometries on the thermal conductivity of bulk media. Analytical results are compared with axially symmetric and three-dimensional thermal simulations of single and multiple cavity defects in planar structures. The effective thermal conductivity of the die to the case attachment solder layer of two commercial metal oxide semiconductor field effect transistor (MOSFET) devices is estimated using these results, with cavity dimensions and distributions obtained by electron microscopy.