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This letter presents the dc and RF study and comparison on four manufacturable single- (one and dual additional masks) and stacked- (intraand multiple inter-) metal-insulator-metal capacitors (MIMCs) in a Cu dual-damascene backend of line process. The capacitors were found to exhibit low leakage and high breakdown field strength, absence of dispersive behavior, and good voltage and temperature linearity. Their quality factor (Q) values are different due to the different electrode series resistance as a result of different architectures. The stacked MIMC offers reduced chip area for the same capacitance value and is a viable manufacturable alternative for current and future precision mixed-mode capacitor incorporating SiN or high-κ dielectric materials.