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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:25 Issue:7 Help

Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET

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4 Author(s)
Zhao, J.H. ; Electron. & Comput. Eng. Dept., Rutgers Univ., Piscataway, NJ, USA ; Alexandrov, P. ; Jianhui Zhang ; Xueqing Li

This letter reports the first demonstration of 101 kV trenched-and-implanted normally off 4H-SiC vertical junction field-effect transistor (TI-VJFET) with a 120 μm ∼4.9×1014 cm-3-doped drift layer. Blocking voltages (VB) of 10 kV to 11 kV have been measured. The best specific on-resistance (RSP_ON) normalized to source active area has been determined to be 130 mΩ·cm2. Three-dimensional computer modeling including current spreading effect shows that the TI-VJFET would have a specific resistance of 168 mΩ·cm2 if it is scaled up substantially in size.

Published in:
Electron Device Letters, IEEE  (Volume:25 ,  Issue: 7 )

Date of Publication: July 2004

Page(s):
474 - 476
ISSN :
0741-3106
INSPEC Accession Number:
8122189
Digital Object Identifier :
10.1109/LED.2004.830265
Product Type:
Journals & Magazines
Date of Current Version :
28 June 2004
Issue Date :
July 2004
Sponsored by :
IEEE Electron Devices Society

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