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Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET

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4 Author(s)
Zhao, J.H. ; Electron. & Comput. Eng. Dept., Rutgers Univ., Piscataway, NJ, USA ; Alexandrov, P. ; Jianhui Zhang ; Xueqing Li

This letter reports the first demonstration of 101 kV trenched-and-implanted normally off 4H-SiC vertical junction field-effect transistor (TI-VJFET) with a 120 μm /spl sim/4.9×10/sup 14/ cm/sup -3/-doped drift layer. Blocking voltages (V/sub B/) of 10 kV to 11 kV have been measured. The best specific on-resistance (R/sub SP/_/sub ON/) normalized to source active area has been determined to be 130 m/spl Omega//spl middot/cm2. Three-dimensional computer modeling including current spreading effect shows that the TI-VJFET would have a specific resistance of 168 m/spl Omega//spl middot/cm2 if it is scaled up substantially in size.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 7 )