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This letter reports the first demonstration of 101 kV trenched-and-implanted normally off 4H-SiC vertical junction field-effect transistor (TI-VJFET) with a 120 μm ∼4.9×1014 cm-3-doped drift layer. Blocking voltages (VB) of 10 kV to 11 kV have been measured. The best specific on-resistance (RSP_ON) normalized to source active area has been determined to be 130 mΩ·cm2. Three-dimensional computer modeling including current spreading effect shows that the TI-VJFET would have a specific resistance of 168 mΩ·cm2 if it is scaled up substantially in size.
Date of Publication: July 2004