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Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity

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4 Author(s)
Biyikli, N. ; Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey ; Kimukin, I. ; Aytur, O. ; Ozbay, E.

We report solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values up to 6 V. The device responsivity increased with reverse bias and reached 0.11 A/W at 261 nm under 10-V reverse bias. The detectors exhibited a cutoff around 283 nm, and a visible rejection of four orders of magnitude at zero bias. Low dark current values led to a high differential resistance of 9.52×1015 Ω. The thermally limited detectivity of the devices was calculated as 4.9×1014 cm·Hz12/W-1.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 7 )

Date of Publication:

July 2004

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