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The dual gate lateral inversion layer emitter transistor (DGLILET) is a versatile device with controlled carrier injection and ultra-fast switching capability. The DGLILET has improved trade-off between the on-state and turn-off losses, enabling the performance of high voltage integrated circuits (HVICs) to be enhanced by reducing overall losses at switching frequencies over approximately 10 kHz. This paper focuses on the use of the DGLILET in these applications and demonstrates experimental results of the fabricated devices confirming the enhanced performance.
Date of Publication: 17 June 2004