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0.25 micrometre smart power technology optimised for wireless and consumer applications

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10 Author(s)
Zhu, R. ; SPS, Motorola Inc., Tempe, AZ, USA ; Parthasarathy, V. ; Khemka, V. ; Bose, A.
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In this paper, simultaneous optimisation of 4.5-5.5 V N and PMOS devices, 20-30 V NLDMOS, and NPN and PNP bipolar devices in a 0.25 μm smart power technology for portable wireless and consumer applications is discussed. With the addition of two designated wells, ultra-low resistance N and PMOS devices with good analogue characteristics, best in class 30 V NLDMOS, and integrated high performance NPN and PNP bipolar devices are demonstrated. Practical implementation of a high voltage, isolated diode using an existing device is also discussed and demonstrated.

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Circuits, Devices and Systems, IEE Proceedings -  (Volume:151 ,  Issue: 3 )