Cart (Loading....) | Create Account
Close category search window

0.25 micrometre smart power technology optimised for wireless and consumer applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Zhu, R. ; SPS, Motorola Inc., Tempe, AZ, USA ; Parthasarathy, V. ; Khemka, V. ; Bose, A.
more authors

In this paper, simultaneous optimisation of 4.5-5.5 V N and PMOS devices, 20-30 V NLDMOS, and NPN and PNP bipolar devices in a 0.25 μm smart power technology for portable wireless and consumer applications is discussed. With the addition of two designated wells, ultra-low resistance N and PMOS devices with good analogue characteristics, best in class 30 V NLDMOS, and integrated high performance NPN and PNP bipolar devices are demonstrated. Practical implementation of a high voltage, isolated diode using an existing device is also discussed and demonstrated.

Published in:

Circuits, Devices and Systems, IEE Proceedings -  (Volume:151 ,  Issue: 3 )

Date of Publication:

17 June 2004

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.