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I-V-T studies on ternary silicide Co1-xNixSi2/n-Si Schottky contacts

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6 Author(s)
Shiyang Zhu ; Dept. of Microelectron., Fudan Univ., Shanghai, China ; Guoping Ru ; Qu, Xinping ; Van Meirhaeghe, R.L.
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Ternary silicide Co1-xNixSi2/n-Si(100) contacts with different x value were formed by solid phase reaction of Co/Ni bilayer and substrate Si. Their Schottky barrier properties were studied using the current voltage-temperature (I-V-T) measurements range from 100 to 300K. The I-V-T curves show three typical types, which can be related to the barrier height inhomogeneity. A clean trend is found that the barrier height inhomogeneity increases with increasing the annealing temperature. Ni incorporation reduces not only the silicidation temperature, but also the temperature at which the contact becomes inhomogeneity.

Published in:

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Date of Conference:

15-16 March 2004