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Study of Co silicidation process for 0.18/0.15μm CMOS technology

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2 Author(s)
Hu Hengsheng ; Shanghai IC R&D Center, China ; Shoumian, C.

In this paper, two approaches to form CoSi2, Co/Ti and Co/TiN, were studied. It was found that reactive Ti was helpful to reduce the influence of surface condition with non-uniform monosilicide formation even without surface cleaning. However, Co/TiN without surface cleaning could not form monosilicide at all. When the thermal budget of RTP2 is too high, the disilicide on Boron doped polylines was easier to be degraded, both poor Rsh distribution and rougher surface were seen. Based on stable Rsh and junction leakage performance of patterned wafers, it can be said that the Co salicide process is successfully being developed for 0.18μm technology, and has the capability to be extended to at least 0.15μm technology.

Published in:

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Date of Conference:

15-16 March 2004