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This work describes properties of films and solar cells prepared under deposition conditions close to the transition from amorphous silicon (a-Si:H) to microcrystalline silicon (/spl mu/c-Si:H) growth and vice versa. The transition from a-Si:H to /spl mu/c-Si:H shifts to a lower silane concentration when using a-SiC:H p-layers compared to films deposited directly on the glass or on /spl mu/c-Si:H p-layers. Solar cells deposited under identical deposition conditions using a-SiC:H p-layers or /spl mu/c-Si:H p-layers can result in high band gap a-Si:H solar cells or typical /spl mu/c-Si:H solar cells, respectively. When increasing the i-layer thickness of solar cells prepared close to the transition from a-Si:H to /spl mu/c-Si:H using a-SiC:H p-layers the crystalline volume fraction increases. As soon as the crystalline volume fraction of the i-layer increases the fill factor and open circuit voltage decreases. We could achieve a maximum open circuit voltage of 988 mV for our solar cells.