Hydrogenated silicon carbon films prepared by hot wire chemical vapor deposition using monomethylsilane

Hydrogenated microcrystalline silicon carbon (/spl mu/c-Si/sub 1-x/C/sub x/:H) films were deposited by hot wire chemical vapor deposition (HWCVD) using a gas mixture of silane, hydrogen and monomethylsilane. We could successfully deposited both /spl mu/c-Si/sub 1-x/C/sub x/:H film whose body was Si microcrystallites embedded in a-Si/sub 1-x/C/sub x/:H and /spl mu/c-3C-SiC:H film whose body was 3C-SiC microcrystallites embedded in a-Si/sub 1-x/C/sub x/:H. The band gap of the /spl mu/c-Si/sub 1-x/C/sub x/:H film estimated from collection efficiencies of Schottky diodes is almost same as that of a /spl mu/c-Si:H film. /spl mu/c-3C-SiC:H film had a columnar structure with a lateral grain size of about 20 nm and a band gap of 2.49 eV.