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The influence of various parameters on microcrystalline silicon films and solar cells by hot-wire CVD

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8 Author(s)
J. C. Lee ; Photovoltaic Res. Center, Korea Inst. of Energy Res., South Korea ; Y. S. Jung ; S. W. Kwon ; K. S. Lim
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Microcrystalline silicon (/spl mu/c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature (T/sub f/) during intrinsic layer. J/sub sc/ and efficiency abruptly decreases with elevated T/sub f/ to 1400/spl deg/C. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high T/sub f/. The heater temperature (T/sub h/) are also critical parameter that controls device operations. Solar cells prepared at low T/sub h/ (<200/spl deg/C) shows a similar operating properties with devices prepared at high T/sub f/ i.e. low j/sub sc/, V/sub oc/ and efficiency. The origins for this result, however, are different with that of inferior device performances at high T/sub f/. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with T/sub f/.

Published in:

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on  (Volume:2 )

Date of Conference:

18-18 May 2003