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We carried out the recrystallization of small-grain-size poly-Si films by means of irradiation with continuous wave (CW) laser diode light (GaAlAs: 840 nm) scanning. The CW laser light produced by the laser diode induced lateral crystallization and yielded polycrystalline silicon with grains longer than 100 /spl mu/m and with widths of up to 20 /spl mu/m. Electron backscattered diffraction measurement (EBSD) was performed to analyze the crystalline structures, including grain shape, size, and orientation. Our measurements revealed that the orientations of the poly-Si films were textured. The mean grain area was over 1000 /spl mu/m/sup 2/.
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on (Volume:2 )
Date of Conference: 18-18 May 2003