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Very low temperature emitter growth n/sup +/p solar cells on 2 /spl mu/m poly-Si/Al/sub 2/O/sub 3/ substrates

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6 Author(s)
R. Shimokawa ; Nat. Inst. of Adv. Ind. Sci. & Technol., Japan ; H. Takato ; H. Abe ; M. Yamanaka
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We have tried the low temperature n-type emitter growth to obtain high open circuit voltages (Voc) as an alternative to the diffusion technology. The quality of low temperature n/sup +/ poly-Si/p poly-Si/Al/sub 2/O/sub 3/ solar cells were investigated through the transmission electron microscopy and photovoltaic I-V characteristics. High quality poly-Si/Al/sub 2/O/sub 3/ substrates having a few dislocations and stacking faults without strain were obtained. Also, relatively-high Voc solar cells could be fabricated at very low temperature less than 200/spl deg/C by standard plasma-enhanced chemical vapor deposition (PECVD).

Published in:

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on  (Volume:2 )

Date of Conference:

18-18 May 2003