Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Electrical and optical properties of polycrystalline silicon seed layers made on glass by solid-phase crystallisation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Goldschmidt, J.C. ; Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia ; Roth, K. ; Chuangsuwanich, N. ; Sproul, A.B.
more authors

We used solid-phase crystallisation (SPC) of PECVD-deposited doped amorphous silicon (a-Si:H) on planar and textured glass to produce polycrystalline silicon (poly-Si) seed layers for subsequent epitaxial silicon growth. In this paper we present the effects of several parameters (SPC temperature profile, barrier layer on the glass, doping level of the a-Si) on the specific resistivity and the optical properties of the resulting poly-Si films. A low specific resistivity of 8 m/spl Omega/cm was achieved on barrier-coated textured glass for 100-nm a-Si:H films with a doping step, using a step-like SPC process (1 hr at 620/spl deg/C followed by 39.5 hrs at 580/spl deg/C). Modelling of the measured transmission spectra shows that the refractive index of the poly-Si films is very close to that of single-crystalline silicon.

Published in:

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on  (Volume:2 )

Date of Conference:

18-18 May 2003