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Structural properties of polycrystalline silicon seed layers made on glass by solid-phase crystallisation

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6 Author(s)
Roth, K. ; Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia ; Goldschmidt, J.C. ; Puzzer, T. ; Chuangsuwanich, N.
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We made high-quality n/sup +/-doped polycrystalline silicon (poly-Si) thin-films on glass for a prospective use as seed layers for subsequent epitaxial growth of poly-Si thin-film solar cells. The seed layers are less than 200 nm thick, have a grain size of up to 2 /spl mu/m, and were made from PECVD-deposited phosphorus-doped a-Si precursor layers that were thermally crystallised ("solid-phase crystallisation", SPC) at about 600/spl deg/C using various temperature-time profiles. In this paper we present the structural properties of these SPC poly-Si films on glass, as determined by transmission electron microscopy and focussed ion beam investigations.

Published in:

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on  (Volume:2 )

Date of Conference:

18-18 May 2003