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Electrical property evaluation of polycrystalline silicon thin film on textured substrate

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10 Author(s)
R. Muhida ; Dept. of Phys. Sci., Osaka Univ., Japan ; T. Kawamura ; T. Harano ; M. Okajima
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The electrical conductivities of the poly-Si thin films deposited on the substrates with different surface texture have been studied using the alternating current (AC)-conductivity measurement technique. The activation energy of the dark conductivities for poly-Si films with deposited on relative low of the root mean square (rms) roughness (/spl sigma/) of 22 nm is close to 0.55 eV indicating intrinsic nature. On other hand, with increase in /spl sigma/>37 nm, poly-Si films exhibits n-type character. Changes in electrical conductivities of the poly-Si thin films in conjunction with the results on photovoltaic performances, optical reflectance, and microstructure are also discussed.

Published in:

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on  (Volume:2 )

Date of Conference:

18-18 May 2003