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The electrical conductivities of the poly-Si thin films deposited on the substrates with different surface texture have been studied using the alternating current (AC)-conductivity measurement technique. The activation energy of the dark conductivities for poly-Si films with deposited on relative low of the root mean square (rms) roughness (/spl sigma/) of 22 nm is close to 0.55 eV indicating intrinsic nature. On other hand, with increase in /spl sigma/>37 nm, poly-Si films exhibits n-type character. Changes in electrical conductivities of the poly-Si thin films in conjunction with the results on photovoltaic performances, optical reflectance, and microstructure are also discussed.