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InGaP/InGaAs PHEMT with high IP3 for low noise applications

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7 Author(s)
Lin, Y.C. ; Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chang, E.Y. ; Chen, G.J. ; Lee, H.M.
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A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IP3 was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 12 )