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High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

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7 Author(s)
Shiojima, K. ; NTT Photonics Labs., Atsugi, Japan ; Makimura, T. ; Kosugi, T. ; Sugitani, S.
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The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7×300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 12 )