By Topic

Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
T. Alzanki ; Sch. of Electron. & Phys. Sci., Univ. of Surrey, Guildford, UK ; R. Gwilliam ; N. Emerson ; B. J. Sealy

Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1×1015 Sb+ cm-2 in <100> silicon with nanometre resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 12 )