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AlGaAsSb/InGaAsSb phototransistors for spectral range around 2 μm

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9 Author(s)
Sulima, O.V. ; AstroPower Inc., Newark, DE, USA ; Refaat, T.F. ; Mauk, M.G. ; Cox, J.A.
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The first AlGaAsSb/InGaAsSb phototransistors sensitive in the 2.0-2.1 μm spectral range are reported. These phototransistors exhibited both high gain and relatively low noise, and a record 2 μm detectivity of 3.9×1011 cmHz12//W was obtained at -20°C, which is equivalent to a noise-equivalent-power of 4.6×10-14 W/Hz12/.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 12 )