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High-power 2.3 μm laser arrays emitting 10 W CW at room temperature

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5 Author(s)
Belenky, G.L. ; State Univ. of New York, Stony Brook, NY, USA ; Kim, J.G. ; Shterengas, L. ; Gourevitch, A.
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High-power 2.3 μm In(Al)GaAsSb/GaSb type-I double quantum-well diode laser arrays have been fabricated and characterised. Linear laser arrays with 19 100 μm-wide elements on a 1 cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18°C.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 12 )