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Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

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6 Author(s)
Pirovano, A. ; Central Res. & Dev., STMicroclectronics, Milan, Italy ; Lacaita, A.L. ; Pellizzer, F. ; Kostylev, S.A.
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A detailed investigation of the time evolution for the low-field resistance Roff and the threshold voltage Vth in chalcogenide-based phase-change memory devices is presented. It is observed that both Roff and Vth increase and become stable with time and temperature, thus improving the cell readout window. Relying on a microscopic model, the drift of Roff and Vth is linked to the dynamic of the intrinsic traps typical of amorphous chalcogenides, thus providing for the first time a unified framework for the comprehension of chalcogenide materials transient behavior.

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Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 5 )