Cart (Loading....) | Create Account
Close category search window
 

A C-band high-dynamic range GaN HEMT low-noise amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Hongtao Xu ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Sanabria, C. ; Chini, A. ; Keller, Stacia
more authors

A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6 GHz, with an associated gain of 10.9 dB and IIP3 of 13 dBm. it also exhibits broadband operation from 4-8 GHz with noise figure less than 1.9 dB. The circuit can endure up to 31 dBm power from the input port. Compared to circuits based on other material and technology, the circuit shows comparable noise figure with improved dynamic range and survivability.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:14 ,  Issue: 6 )

Date of Publication:

June 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.