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Rectifying effect in boron nanowire devices

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4 Author(s)
Wang, Dawei ; Dept. of Chem. Eng., Univ. of California, Irvine, CA, USA ; Otten, Carolyn Jones ; Buhro, William E. ; Lu, Jia G.

It has been found that Ni forms ohmic contacts and Ti forms Schottky-barrier contacts to boron nanowires (BNWs). Using two-step electron-beam lithography, Ni and Ti electrodes are subsequently attached onto the ends of a single BNW. As a result, a nanoscale rectifier is created using a BNW.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:3 ,  Issue: 2 )