By Topic

MOS-junction-based nanostructures by thermal oxidation of silicon wires for hydrogen detection

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Tibuzzi, A. ; Dept. of Inf. & Commun. Technol., Univ. of Trento, Povo-Trento, Italy ; Margesin, B. ; Decarli, M. ; Di Natale, C.
more authors

Heavily p-doped monocrystalline silicon wires have been fabricated by employing isotropic Si wet etch and thermal oxidation to achieve a nanometric cross section-a gate-oxide growth and a final palladium evaporation made up the MOS junction able to detect hydrogen concentration in air. Several types of wire dimensions have been designed and fabricated: length ranges from 5 to 70 μm; the smallest widths obtained are around 250-300 nm, while the biggest are up to 7 μm. Preliminary experimental results show a high signal/noise ratio sensor response to 100 ppm concentration of H2 at room temperature, 1-atm air.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:3 ,  Issue: 2 )