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Fabrication and accelerated hermeticity testing of an on-wafer package for RF MEMS

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2 Author(s)
Margomenos, A. ; Radiat. Lab., Univ. of Michigan, Ann Arbor, MI, USA ; Katehi, L.P.B.

A hermetic silicon micromachined on-wafer dc-to-40-GHz packaging scheme for RF microelectromechanical systems (MEMS) switches is presented. The designed on-wafer package has a deembedded insertion loss of 0.03 dB per transition up to 40 GHz (a total measured loss of 0.3 dB including a 2.7-mm-long through line) and a return loss below -18dB up to 40 GHz. The hermeticity of the packaged is tested using an autoclave chamber with accelerated conditions of 130°C, 2.7 atm of pressure, and 100% relative humidity. The fabrication process is designed so as to be completely compatible with the MEMS switch process, hence, allowing the parallel fabrication of all the components on a single wafer. The on-wafer proposed packaging approach requires no external wiring to achieve signal propagation and, thus, it has the potential for lower loss and better performance at higher frequencies.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:52 ,  Issue: 6 )