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Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier

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2 Author(s)
Qiurong He ; Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA ; Milton Feng

We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than ±1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:39 ,  Issue: 6 )

Date of Publication:

June 2004

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