Referenced Items are not available for this document.
This letter reports a silicon-based field-induced band-to-band tunnelling effect transistor (FIBTET), which has a structure totally compatible with silicon-on-insulator (SOI) MOSFET. The field-induced band-to-band tunnelling effect between degenerate channel and source/drain is used as the key principle of the device operation. FIBTETs demonstrate the controllable negative differential transconductance characteristics at room temperature both for n-FIBTETs and p-FIBTETs. The size dependence of the device characteristics shows that the peak tunnelling current can be controlled by the layout design of channel length and width.
Published in:
Electron Device Letters, IEEE
(Volume:25
,
Issue:
6
)
Date of Publication: June 2004
- Page(s):
- 439 - 441
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8085488
- Digital Object Identifier :
- 10.1109/LED.2004.829668
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 01 June 2004
- Issue Date :
- June 2004
- Sponsored by :
- IEEE Electron Devices Society
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