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High-κ/metal-gate stack and its MOSFET characteristics

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6 Author(s)
Chau, R. ; Logic Technol. Dev., Intel Corp., Hillsboro, OR, USA ; Datta, S. ; Doczy, M. ; Doyle, B.
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We show experimental evidence of surface phonon scattering in the high-κ dielectric being the primary cause of channel electron mobility degradation. Next, we show that midgap TiN metal-gate electrode is effective in screening phonon scattering in the high-κ dielectric from coupling to the channel under inversion conditions, resulting in improved channel electron mobility. We then show that other metal-gate electrodes, such as the ones with n+ and p+ work functions, are also effective in improving channel mobilities to close to those of the conventional SiO2/poly-Si stack. Finally, we demonstrate this mobility degradation recovery translates directly into high drive performance on high-κ/metal-gate CMOS transistors with desirable threshold voltages.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 6 )