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InGaN-GaN MQW LEDs with current blocking layer formed by selective activation

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5 Author(s)
Chia-Ming Lee ; Dept. of Electr. Eng., National Central Univ., Taiwan ; Chang-Cheng Chuo ; Liu, Yu-Chuan ; I-Ling Chen
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Selective activation technique was used to define a semi-insulating current-blocking layer underneath the p-pad of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The output power of the LEDs at 20 mA was increased 10% because less current was injected underneath the opaque p-pad.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 6 )