Referenced Items are not available for this document.
Selective activation technique was used to define a semi-insulating current-blocking layer underneath the p-pad of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The output power of the LEDs at 20 mA was increased 10% because less current was injected underneath the opaque p-pad.
Published in:
Electron Device Letters, IEEE
(Volume:25
,
Issue:
6
)
Date of Publication: June 2004
- Page(s):
- 384 - 386
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8085479
- Digital Object Identifier :
- 10.1109/LED.2004.829666
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 01 June 2004
- Issue Date :
- June 2004
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
