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A 183 GHz fT and 165 GHz fmax regrown-emitter DHBT with abrupt InP emitter

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5 Author(s)
D. W. Scott ; Dept. of Electr. & Comput. Eng., California Univ., USA ; Yun Wei ; Yingda Dong ; A. C. Gossard
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Small-area regrown emitter-base junction InP/In-GaAs/InP double heterojunction bipolar transistors (DHBT) using an abrupt InP emitter are presented for the first time. In a device with emitter-base junction area of 0.7 × 8 μm2, a maximum 183 GHz fT and 165 GHz fmax are exhibited. To our knowledge, this is the highest reported bandwidth for a III-V bipolar transistor utilizing emitter regrowth. The emitter current density is 6×105 A/cm2 at V/sub CE,sat/ = 1.5 V. The small-signal current gain h/sub 21/ = 17, while collector breakdown voltage is near 6 V for the 1500-/spl Aring/-thick collector. The emitter structure, created by nonselective molecular beam epitaxy regrowth, combines a small-area emitter-base junction and a larger-area extrinsic emitter contact, and is similar in structure to that of a SiGe HBT. The higher fT and fmax compared to previously reported devices are achieved by simplified regrowth using an InP emitter and by improvements to the regrowth surface preparation process.

Published in:

IEEE Electron Device Letters  (Volume:25 ,  Issue: 6 )