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Design of a fully integrated high linearity dual-band CMOS LNA

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4 Author(s)
Jou, C.F. ; Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Kuo-Hua Cheng ; Pang-Ruci Huang ; Mei-Chien Chen

A fully-integrated dual-band LNA ( Low Noise Amplifier) with high linearity is presented in this thesis. Designed and implemented in 0.25 μm mixed-signal CMOS process, the LNA simultaneously delivered narrow-band gain and matching at 2.45GHz and 5.25GHz. The LNA exhibits input matching with S11 of -20.48dB at 2.45GHz and -16.6dB at 5.25GHz. And it achieves small-signal gain of 5.78dB and 3.24dB, noise figure 4.7dB and 5.69dB, and IIP3 7dBm and 17dBm.

Published in:

Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on  (Volume:3 )

Date of Conference:

14-17 Dec. 2003