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Performance of poly-Si TFTs fabricated by SELAX

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7 Author(s)
Tai, M. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Hatano, Mutsuko ; Yamaguchi, Shinya ; Noda, T.
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Selectively enlarging laser crystallization (SELAX) has been proposed as a new crystallization process for use in the fabrication of thin-film transistors (TFTs). This method is capable of producing a large-grained and flat film of poly-Si. The average grain size is 0.3×5 μm, and the surface roughness of the poly-Si layer is less than 5 nm. The TFTs fabricated with this method have better performance and are more uniform than those produced with the conventional excimer laser crystallization (ELC) method. The average values of field-effect mobility are 440 cm2/Vs (n-type), and 130 cm2/Vs (p-type). The subthreshold slope for both types is 0.20 V/dec. Values for standard deviation of threshold voltage are 0.03 V (n-type) and 0.20 V (p-type). The delay time of the CMOS-inverter of SELAX TFTs is less than half that of ELC TFTs.

Published in:

Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 6 )

Date of Publication:

June 2004

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