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Nitride-based LEDs with 800°C grown p-AlInGaN-GaN double-cap layers

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8 Author(s)
Chang, S.J. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Wu, L.W. ; Su, Y.K. ; Hsu, Y.P.
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GaN-based light-emitting diodes (LEDs) with various p-cap layers were prepared. It was found that surface morphologies of the LEDs with 800°C grown cap layers were rough due to the low lateral growth rate of GaN. It was also found that 20-mA forward voltage of the LED with 800°C grown p-AlInGaN-GaN double-cap layer was only 3.05 V. Furthermore, it was found that we could achieve a high output power and a long lifetime by using the 800°C grown p-AlInGaN-GaN double-cap layer.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 6 )

Date of Publication:

June 2004

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