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As/sup +/-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity

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5 Author(s)
Li-Hong Laih ; Inst. of Electro-Opt. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Kuo, H.C. ; Gong-Ru Lin ; Laih, L.-W.
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We report the utilization of an As/sup +/-implanted AlGaAs region and regrowth method to enhance and control the wet thermal oxidation rate for 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL). The oxidation rate of the As/sup +/-implanted device showed a four-fold increase over the nonimplanted one at the As/sup +/ dosage of 1/spl times/10/sup 16/ cm/sup -3/ and the oxidation temperature of 400/spl deg/C. 50 side-by-side As/sup +/-implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current of /spl Delta/I/sub th//spl sim/0.2 mA and slope-efficiency of /spl Delta/S.E./spl sim/3%.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 6 )

Date of Publication:

June 2004

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