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Research on wafer scale bonding method based on gold-tin eutectic solders [MEMS packaging]

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5 Author(s)
Sihai Chen ; Inst. of Microsystems, Huazhong Univ. of Sci. & Technol., Wuhan, China ; Mingxiang Chen ; Xinjian Yi ; Honghai Zhang
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This paper presents the preliminary results for an on-going program in wafer-level MEMS packaging. In this particular paper, two classes of samples by reactive ion sputtering technique were presented. The first one was first sputtered with nickel/chromium (Ni/Cr) alloy and then sputtered with gold (Au) metal as bonding material; the second one was sputtered with Cr, tin (Sn) and Au respectively as bonding material. The bonding of the former sample based on Ni/Cr and Au material heating failed in most areas of the wafers. The eutectic bonding experiment of the later sample, based on Cr, Sn and Au material heating by a global heating method was completed in an annealing oven at a temperature of about 350/spl deg/C, and the heating time was three minutes. The testing results showed the eutectic bonding of Au-Sn by global heating was successful in most areas.

Published in:

Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on

Date of Conference:

28-30 Oct. 2003