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RC hardened FPGA configuration SRAM cell design

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1 Author(s)
Wang, W. ; Electr. Eng. & Comput. Sci. Dept., Univ. of Wisconsin-Milwaukee, WI, USA

A radiation hardened configuration bit cell design is proposed for an SRAM-based FPGA used in space application. The p-type gate poly on p-substrate structure provides a radiation immune resistor and a capacitor for RC hardened signal path. In addition to area efficiency, the proposed cell also overcomes the traditional linear energy transfer sensitivity to process and temperature variation.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 9 )