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This paper discusses the design and operational properties of a circular array of slot coupled active GaAs metal-semiconductor field-effect transistor (MESFET) rectangular microstrip patch antennas arranged for quasioptical power combining at X band. The active antenna radiating elements are injection locked by slot coupling to a radial cavity waveguide. Spatial power combining efficiency of 75% and dc to radio frequency (RF) conversion efficiency of 10% at 28 dBm EIRP was achieved at 10.38 GHz. Retrodirective action was also demonstrated by using the active elements as self-oscillating mixers pumped at 20.76 GHz.