By Topic

An advanced defect-monitoring test structure for electrical screening and defect localization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hamamura, Y. ; Production Eng. Res. Lab., Hitachi Ltd., Yokohama, Japan ; Kumazawa, T. ; Tsunokuni, Kazuyuki ; Sugimoto, Aritoshi
more authors

A new test structure for the detection and localization of short and open defects in large-scale integrated intralayer wiring processes is proposed. In the structure, an open-monitoring element in the first metal layer meanders around lines of short-monitoring elements placed in contact with N-type diffusion regions to make the structure compact. The proposed structure allows defective test structures to be screened through electrical measurements and killer defects to be localized through voltage contrast or optical microscopy methods.

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:17 ,  Issue: 2 )