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A novel process is presented which produces platinum features using direct UV exposure of the photosensitive organometallic material. The technique reduces the number of process steps involved when creating a metal pattern on a substrate by not requiring photoresist, solvents, or etch processes. In contrast to processes already reported in the literature, the method is compatible with microelectronic processes and does not require costly special equipment. Two test chips with MOS capacitors and resistive structures fabricated using the new organometallic material have been characterized. The results show that the deposited films are metallic and have a good adhesion to silicon dioxide. The work function of the platinum films is in agreement with the value found in the literature, but the measured resistivity and XPS indicate that the metal film contains some remaining organometallic residue after pattern development.